Three major memory companies are in fierce competition in next-generation broadband memory, with mass production scheduled for the first half of the year in South Korea

Samsung Electronics recently announced that it has successfully developed the industry's first 36 GB high bandwidth memory (HBM) DRAM using 12-layer stacking technology. 24 gigabi
By using through-silicon vias (TSV) in a DRAM chip, we have realized a 12-layer stacked HBM3E (5th generation HBM) 12H (12-layer stacked).
The company will begin mass production of this product from the January to June period of this year. It is scheduled to be supplied together with the 8-layer stacked HBM3E 8H, which was decided to be supplied prior to this.
Samsung Electronics, SK Hynix, and Micron of the US, which hold a large share of the DRAM market, are expected to accelerate the development and mass production of their cutting-edge HBM3E products as early as March.
Micron announced on its website that it had started mass production of the HBM3E. The 24-gigabyte HBM3E 8H (8-tier stacked) product will be shipped from the U.S. Semiconductor University in the April-June period.
It is said to be installed in NVIDIA's image processing semiconductor (GPU) "H200". On the other hand, SK Hynix said, ``HBM3E
8H' mass production began in January. The 12-layer stacked product meets the JEDEC standard for semiconductor devices.
It will be the same height as an 8-tier laminated product." The industry expects that mass production of HBM4 will begin in earnest around 2026.