Samsung Electronics struggling with high-bandwidth memory, cooperation with TSMC is becoming a reality - South Korean media

South Korean semiconductor giant SK Hynix has completed orders for high-bandwidth memory (HBM) through 2025. The industry expects the company to maintain its lead in the HBM market next year as well.
Meanwhile, Samsung Electronics announced that it is "in mass production of both 8-layer and 12-layer HBM3E." However, supply is slower than initially expected for the July-September period, and it is difficult to expand its share of the HBM market.
The situation is unclear. The performance of the 14-nanometer class (1a) DRAM itself that Samsung Electronics uses to manufacture HBM3E is considered to be inferior to that of SK Hynix.
Samsung Electronics is reportedly redesigning its 1a DRAM for HBM manufacturing, and may collaborate with Taiwan Semiconductor Manufacturing Co. (TSMC), a major foundry.
Samsung Electronics has emphasized that it offers a one-stop solution, from design to memory and foundry (contract manufacturing of semiconductors).
The company had planned to manufacture the base dies to be used in the next-generation MOSFETs, but this plan has now been changed. Now that its memory business, which has maintained its market leadership, is in crisis, HBM is the only way to overcome this.
It has been determined that the two companies need to improve their technological capabilities. There is a possibility that cooperation will progress not only in the base die but also in the packaging field, where TSMC is considered to have an advantage.